Tribo-electric/electret
(Nano) Generator TENG)
Grants:
CNRS, Campus France
Modeling
Devices
Conditioning circuit with
micro-plasma switch
Publications
Modeling
Simple TENG model
In addition to the model proposed by
Niu et al, we have
proposed a lumped model directly inspired from the
traditional electret Kinetic Energy Harvester. This model is
suitable for PSpice and can easily take into account practical
specifications of the TENG for accurate conditioning circuit
simulations.
TENG electrical model. a. Schematic of a TENG.
b. Detailed electrical model. c. Compact electrical model.
VTE is a constant voltage
source representing the charge trapped in the the triboelectret
layer. It is independant from the mobile electrode position and
from the load. It can be directly measured with an electrostatic
contactless volmeter, or, if the layer is not accessible, using
an electrical technique we have developped in purpose.
CTENG is the capacitance
measured accross the TENG terminals. It can be
obtained by measuring the phase shift in an
RC circuit.
In this work, we have also modelized the effect of the
mechanical contact.
Comparison between PSpice simulation and
experimental results for a gap-closing TENG.
Optimization of a two-stage power management
We provided a comprehensive general
theory that determines the optimal electrical bias
conditions for this class of rectifiers. We proposed generic
formulas that applie to full-wave and half-wave diode
bridges. Key figures have been demonstrated like for
instance the optimal bias voltage or the maximum converted
energy. It is confirmed that half-wave rectifiers always
have a higher saturated voltage, as well as higher maximum
energy per cycle, but at the cost of longer start-up time.
On the contrary, full-wave rectifiers perform better only
when the output voltage is much lower than the internal
triboelectric voltage of the TENG. These rectifiers followed
by a buck DC-DC converter have also been studied in details,
often required to provide a low output voltage. We showed
that the optimal buck switch activation is between .5 and
.7 of the charge-pump saturation voltage, depending on the
hysteresis of the switch, and that the charging time of the
output capacitor is at least twice as fast with a half-wave
rectifier than with a full-wave rectifier. The theoretical
results were confirmed by simulations and experiments using
a plasma switch.
Simulation results of
a two-stage power management circuit (2SPMC). (a) Schematic
of the 2SPMC. (b) Energy and average energy per cycle in
Crect using the HW rectifier. (c) Voltage across Crec
with two levels of switch hysteresis.
Optimization for a small number of mechanical actuations
We have presented an optimization framework to maximize
the energy conversion in the early stages of transducer
operation by tuning the output capacitor (Crec) of the DC
rectifier. Through a combination of analytical modeling,
SPICE simulations, and experimental validation using a
custom test bench, we show that after the first mechanical
actuation, tuning Crect to a value close to the minimum
value of the TENG capacitance, and choosing the half-wave
rather than the full-wave rectifier configuration, can
drastically enhance the energy conversion. For the first
actuation, half-wave and full-wave are equivalent as long
as Crect is minimized and less than the maximum value of
the TENG capacitance.
Harvested energy
obtained with SPICE simulations and analytically
(identical results) for the first four actuations. (a)
Accumulated energy ΔW for the half-wave rectifier,
(b) average energy per mechanical cycle for the halfwave
rectifier, (c) accumulated energy ΔW for the full
wave rectifier, and (d) average energy per mechanical
cycle for the full-wave rectifier.
Devices
Soft TENG
We have devloped a simple flexible and progressive triboelectric
nanogenerator based on macro-triangle-prism-shaped conductive
polyurethane (PU) foam and polytetrafluoroethylene (PTFE) film.
The proposed macro-structured conductive PU foam also integrates
the functions of spring, spacer and electrode. Thanks to the
innovative structures and choice of the materials, an extended
current pulse width is obtained.
Ilustration
of the flexible TENG. Diagram (a), top view b(i), side view
b(ii), and fabricated TENG with triangle prisms b(iii). SEM
image of the C-PUF (c). Measured transient current of the
TENG (e), Capacitance variation of the TENG (e). Measurement
setup (g).
Road bump TENG
We have also proposed a road bump triboelectric generator with
Bluetooth communications:
(a)
Road transducer prototype and (b) side view schematic of the
transducer.

Full
circuit for powering a BLE module and transmit sensors data.
Conditioning circuit with micro-plasma switch
Rectification with stable charge pumps
We have shown that a half-wave (HW) rectifier usually performs
much better than a full-wave (FW) diode bridge after a few
conversion cycles. Indeed, during the early cycles, the output
voltage of the FW rectifiers increases with twice the slope of
the HW, although in that case both powers are far from the
optimum of each circuit. However, if the output voltage of the
rectifier can be set to half of its saturation voltage, HW
outperforms the FW by a factor (
CTENG_max/
CTENG_min+1)/2.
Measured and
calculated energy delivered to a capacitive load as a
function of VTENG for a FW and a HW
diode bridge.
Rectification with unstable charge pumps
We have proposed to use the Bennet doubler with TENGs. This is a
new class of conditioning circuit inspired from the electrical
machines of the 18th century. It is also made of diodes and
capacitors only. These circuits have the ability to
exponentially increase the charge on the TENG's electrodes
during operation and so to increase its bias and conversion
efficiency. A minimum value of
CTENG_max/
CTENG_min is necessary, which is typically 2 for
the most simple architecture, but it can vary depending on the
circuit configuration.
Bennet doubler circuit and experimental
comparison with diode bridges.
High-voltage power management using a plasma switch
Electrostatic energy harvesters need a high bias, which for
TENGs is brought by an efficient triboelectric contact and/or
thanks to the voltage boost from an unstable charge pumps.
However, for most applications it is necessary to convert the
output to a low voltage around a few volts. This can be obtained
using a Buck DC-DC converter, but its switch needs to be
controlled at a voltage close to the high bias value. We
proposed to use a MEMS micro-plasma switch to self-control the
charge transfer through a Buck circuit at high voltages. By
adjusting the MEMS switch design, we can control its hysteresis
in order to continuously maintain a high-bias on the transducer
and hence maximize the energy conversion.
This work has been highlighted in the
Electronics Insights Blog
of the
Electropages
website.
Related publications
Modeling of TENGs
A conditioning
circuit with exponential enhancement of output energy for
triboelectic nanogenrator, A. Ghaffarinejad, J.
Yavand Hasani, R. Hinchet, Y. Lu, H. Zhang, A. Karami,
D. Galayko, S.-W. Kim and P. Basset, Nano Energy, vol.
51, pp. 173 184, 2018
Flexible TENG
Conditioning circuits for TENGs and other electrostatic
kinetic harvesters
Employing
a MEMS plasma switch for conditioning high-voltage kinetic
energy harvesters, H. Zhang, F. Marty, X. Xia, Y. Zi,
T. Bourouina, D. Galayko and P. Basset, Nature
Communications, vol. 11, no. 1, p. 3221, 2020
An Inductor-Free Output
Multiplier for Power Promotion and Management of
Triboelectric Nanogenerators toward Self-Powered Systems,
X. Xia, H. Wang, P. Basset, Y. Zhu, Y. Zi, ACS Applied
Materials & Interfaces, Feb 5;12(5):5892-5900, 2020
Superior
performance of half-wave to full-wave rectifier as a power
conditioning circuit for Triboelectric nanogenerators, A.
Ghaffarinejad, J. Y. Hasani, D. Galayko, P. Basset, Nano
Energy, Volume 66, 104137, 2019
A conditioning
circuit with exponential enhancement of output energy for
triboelectic nanogenrator, A. Ghaffarinejad, J.
Yavand Hasani, R. Hinchet, Y. Lu, H. Zhang, A. Karami,
D. Galayko, S.-W. Kim and P. Basset, Nano Energy, vol.
51, pp. 173 184, 2018